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> (2019) Lapshinsky V. A. Emerging ReRAM for "fog", computing and IoT: taxonomy
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Дата 26.03.2020 19:32
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Emerging ReRAM for "fog" computing and IoT: materials and structural options taxonomy
Источники:
- https://www.researchgate.net/publication/34...ptions_taxonomy
- https://www.inderscience.com/info/inarticle.php?artid=106616
- Int/ J/ Nanotecnhol? Vol. 16? Nos. 6/7/8/9/10, 2019, p. 421-435
-

DOI: 10.1504/IJNT.2019.106616

Авторы: Lapshinsky V.A., Patrikeev L.N.

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Abstract:

The emergence of resistive random-access memory (ReRAM) die and fog computing plus internet-of-things (IoT) has given rise to the need for developing memristive memory elements structure and material conductance mechanisms taxonomy for ReRAM. In this paper, we review those aspects, including nanoparticles (metallic, bimetallic, etc.), graphene and other carbon based materials and structures and related 2D materials. The corresponding taxonomies are presented in this paper, which can help to find new materials, optimal values of technological parameters, optimise the structure and maximise the efficiency ReRAM for emerging applications.


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Keywords:

ReRAM; material taxonomy; GRM; graphene and related materials RDRSP; reversible and driven resistive switching phenomena; charge transport mechanisms; RSM; resistive switching media; interfacial engineering layers; memristive story structures; smart' memory chips; PIM/CIM; processing/computing-in-memory; fog computing; IoT; internet-of-things.


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Дата 19.11.2023 10:23
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